? semiconductor components industries, llc, 2015 january, 2015 ? rev. 12 1 publication order number: MJE2955T/d MJE2955T (pnp), mje3055t (npn) complementary silicon plastic power transistors these devices are designed for use in general?purpose amplifier and switching applications. features ? high current gain ? bandwidth product ? these devices are pb?free and are rohs compliant* maximum ratings rating symbol value unit collector?emitter voltage v ceo 60 vdc collector?base voltage v cb 70 vdc emitter?base voltage v eb 5.0 vdc collector current i c 10 adc base current i b 6.0 adc total device dissipation @ t c = 25 c derate above 25 c p d (note 1) 75 0.6 w w/ c operating and storage junction temperature range t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. safe area curves are indicated by figure 1. both limits are applicable and must be observed. thermal characteristics characteristics symbol max unit thermal resistance, junction?to?case r jc 1.67 c/w *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 10 ampere complementary silicon power transistors 60 volts ? 75 watts www. onsemi.com marking diagram mjexx55t = device code xx = 29 or 30 g = pb?free package a = assembly location y = year ww = work week mjexx55tg ay ww device package shipping ordering information MJE2955Tg t o?220 (pb?free) 50 units / rail mje3055tg t o?220 (pb?free) 50 units / rail 1 base emitter 3 collector 2, 4 1 base emitter 3 collector 2, 4 pnp npn to?220 case 221a?09 style 1 1 2 3 4
MJE2955T (pnp), mje3055t (npn) www. onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter sustaining voltage (note 2) (i c = 200 madc, i b = 0) v ceo(sus) 60 ? vdc collector cutoff current (v ce = 30 vdc, i b = 0) i ceo ? 700 adc collector cutoff current (v ce = 70 vdc, v eb(off) = 1.5 vdc) (v ce = 70 vdc, v eb(off) = 1.5 vdc, t c = 150 c) i cex ? ? 1.0 5.0 madc collector cutoff current (v cb = 70 vdc, i e = 0) (v cb = 70 vdc, i e = 0, t c = 150 c) i cbo ? ? 1.0 10 madc emitter cutoff current (v be = 5.0 vdc, i c = 0) i ebo ? 5.0 madc on characteristics dc current gain (note 2) (i c = 4.0 adc, v ce = 4 0 vdc) (i c = 10 adc, v ce = 4.0 vdc) h fe 20 5.0 100 ? ? collector?emitter saturation voltage (note 2) (i c = 4.0 adc, i b = 0.4 adc) (i c = 10 adc, i b = 3.3 adc) v ce(sat) ? ? 1.1 8.0 vdc base?emitter on voltage (note 2) (i c = 4.0 adc, v ce = 4.0 vdc) v be(on) ? 1.8 vdc dynamic characteristics current?gain?bandwidth product (i c = 500 madc, v ce = 10 vdc, f = 500 khz) f t 2.0 ? mhz product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. pulse test: pulse width 300 s, duty cycle 20%.
MJE2955T (pnp), mje3055t (npn) www. onsemi.com 3 10 5.0 figure 1. active?region safe operating area v ce , collector-emitter voltage (volts) 5.0 2.0 1.0 0.2 0.1 20 30 second breakdown limited bonding wire limited thermally limited t c = 25 c (d = 0.1) i c , collector current (amp) dc 7.0 10 5.0 ms 1.0ms 50 60 0.5 7.0 3.0 0.7 0.3 t j = 150 c 100 s there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 1 is based on t j(pk) = 150 c. t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0 t c , case temperature ( c) 75 100 175 25 50 figure 2. dc current gain 125 150 500 0.01 figure 3. power derating i c , collector current (amp) 5.0 0.02 0.05 0.1 0.2 1.0 2.0 10 0.5 300 200 100 50 30 90 0 80 60 40 70 50 h fe , dc current gain 20 10 5.0 t j = 150 c 25 c -55 c v ce = 2.0 v p d , power dissipation (watts) 30 10 20 mje3055t MJE2955T 0.1 i c , collector current (amp) 0.5 1.0 10 0.2 0.3 2.0 3.0 figure 4. ?on? voltages 2.0 0 1.6 1.2 0.8 v, voltage (volts) 0.4 5.0 t j = 25 c v be(sat) @ i c /i b = 10 v be @ v ce = 3.0 v v ce(sat) @ i c /i b = 10 MJE2955T 0.1 i c , collector current (amp) 0.5 1.0 10 0.2 0.3 2.0 3.0 1.4 0 1.2 1.0 0.8 v, voltage (volts) 0.4 5.0 t j = 25 c v be(sat) @ i c /i b = 10 v be @ v ce = 2.0 v v ce(sat) @ i c /i b = 10 mje3055t 0.6 0.2
MJE2955T (pnp), mje3055t (npn) www. onsemi.com 4 package dimensions to?220 case 221a?09 issue ah style 1: pin 1. base 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.415 9.66 10.53 c 0.160 0.190 4.07 4.83 d 0.025 0.038 0.64 0.96 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.024 0.36 0.61 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 MJE2955T/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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